From: Bin Meng Date: Thu, 5 Feb 2015 15:42:27 +0000 (+0800) Subject: dt-bindings: Add Intel Quark MRC bindings X-Git-Tag: v2015.04-rc2~32^2~9 X-Git-Url: https://git.librecmc.org/?a=commitdiff_plain;h=b1420c813074d39cd2452d7bc45374561d1cf223;p=oweals%2Fu-boot.git dt-bindings: Add Intel Quark MRC bindings Add standard dt-bindings macros to be used by Intel Quark MRC node. Signed-off-by: Bin Meng Acked-by: Simon Glass --- diff --git a/include/dt-bindings/mrc/quark.h b/include/dt-bindings/mrc/quark.h new file mode 100644 index 0000000000..e3ca8a25a3 --- /dev/null +++ b/include/dt-bindings/mrc/quark.h @@ -0,0 +1,83 @@ +/* + * Copyright (C) 2015, Bin Meng + * + * SPDX-License-Identifier: GPL-2.0+ + * + * Intel Quark MRC bindings include several properties + * as part of an Intel Quark MRC node. In most cases, + * the value of these properties uses the standard values + * defined in this header. + */ + +#ifndef _DT_BINDINGS_QRK_MRC_H_ +#define _DT_BINDINGS_QRK_MRC_H_ + +/* MRC platform data flags */ +#define MRC_FLAG_ECC_EN 0x00000001 +#define MRC_FLAG_SCRAMBLE_EN 0x00000002 +#define MRC_FLAG_MEMTEST_EN 0x00000004 +/* 0b DDR "fly-by" topology else 1b DDR "tree" topology */ +#define MRC_FLAG_TOP_TREE_EN 0x00000008 +/* If set ODR signal is asserted to DRAM devices on writes */ +#define MRC_FLAG_WR_ODT_EN 0x00000010 + +/* DRAM width */ +#define DRAM_WIDTH_X8 0 +#define DRAM_WIDTH_X16 1 +#define DRAM_WIDTH_X32 2 + +/* DRAM speed */ +#define DRAM_FREQ_800 0 +#define DRAM_FREQ_1066 1 + +/* DRAM type */ +#define DRAM_TYPE_DDR3 0 +#define DRAM_TYPE_DDR3L 1 + +/* DRAM rank mask */ +#define DRAM_RANK(n) (1 << (n)) + +/* DRAM channel mask */ +#define DRAM_CHANNEL(n) (1 << (n)) + +/* DRAM channel width */ +#define DRAM_CHANNEL_WIDTH_X8 0 +#define DRAM_CHANNEL_WIDTH_X16 1 +#define DRAM_CHANNEL_WIDTH_X32 2 + +/* DRAM address mode */ +#define DRAM_ADDR_MODE0 0 +#define DRAM_ADDR_MODE1 1 +#define DRAM_ADDR_MODE2 2 + +/* DRAM refresh rate */ +#define DRAM_REFRESH_RATE_195US 1 +#define DRAM_REFRESH_RATE_39US 2 +#define DRAM_REFRESH_RATE_785US 3 + +/* DRAM SR temprature range */ +#define DRAM_SRT_RANGE_NORMAL 0 +#define DRAM_SRT_RANGE_EXTENDED 1 + +/* DRAM ron value */ +#define DRAM_RON_34OHM 0 +#define DRAM_RON_40OHM 1 + +/* DRAM rtt nom value */ +#define DRAM_RTT_NOM_40OHM 0 +#define DRAM_RTT_NOM_60OHM 1 +#define DRAM_RTT_NOM_120OHM 2 + +/* DRAM rd odt value */ +#define DRAM_RD_ODT_OFF 0 +#define DRAM_RD_ODT_60OHM 1 +#define DRAM_RD_ODT_120OHM 2 +#define DRAM_RD_ODT_180OHM 3 + +/* DRAM density */ +#define DRAM_DENSITY_512M 0 +#define DRAM_DENSITY_1G 1 +#define DRAM_DENSITY_2G 2 +#define DRAM_DENSITY_4G 3 + +#endif /* _DT_BINDINGS_QRK_MRC_H_ */