}
/* Chip Select Configuration (CSn_CONFIG) */
-static void set_csn_config(int i, fsl_ddr_cfg_regs_t *ddr,
+static void set_csn_config(int dimm_number, int i, fsl_ddr_cfg_regs_t *ddr,
const memctl_options_t *popts,
const dimm_params_t *dimm_params)
{
unsigned int ba_bits_cs_n = 0; /* Num of bank bits for SDRAM on CSn */
unsigned int row_bits_cs_n = 0; /* Num of row bits for SDRAM on CSn */
unsigned int col_bits_cs_n = 0; /* Num of ocl bits for SDRAM on CSn */
+ int go_config = 0;
/* Compute CS_CONFIG only for existing ranks of each DIMM. */
- if ((((i&1) == 0)
- && (dimm_params[i/2].n_ranks == 1))
- || (dimm_params[i/2].n_ranks == 2)) {
- unsigned int n_banks_per_sdram_device;
- cs_n_en = 1;
- if (i == 0) {
+ switch (i) {
+ case 0:
+ if (dimm_params[dimm_number].n_ranks > 0) {
+ go_config = 1;
/* These fields only available in CS0_CONFIG */
intlv_en = popts->memctl_interleaving;
intlv_ctl = popts->memctl_interleaving_mode;
}
+ break;
+ case 1:
+ if ((dimm_number == 0 && dimm_params[0].n_ranks > 1) || \
+ (dimm_number == 1 && dimm_params[1].n_ranks > 0))
+ go_config = 1;
+ break;
+ case 2:
+ if ((dimm_number == 0 && dimm_params[0].n_ranks > 2) || \
+ (dimm_number > 1 && dimm_params[dimm_number].n_ranks > 0))
+ go_config = 1;
+ break;
+ case 3:
+ if ((dimm_number == 0 && dimm_params[0].n_ranks > 3) || \
+ (dimm_number == 1 && dimm_params[1].n_ranks > 1) || \
+ (dimm_number == 3 && dimm_params[3].n_ranks > 0))
+ go_config = 1;
+ break;
+ default:
+ break;
+ }
+ if (go_config) {
+ unsigned int n_banks_per_sdram_device;
+ cs_n_en = 1;
ap_n_en = popts->cs_local_opts[i].auto_precharge;
odt_rd_cfg = popts->cs_local_opts[i].odt_rd_cfg;
odt_wr_cfg = popts->cs_local_opts[i].odt_wr_cfg;
n_banks_per_sdram_device
- = dimm_params[i/2].n_banks_per_sdram_device;
+ = dimm_params[dimm_number].n_banks_per_sdram_device;
ba_bits_cs_n = __ilog2(n_banks_per_sdram_device) - 2;
- row_bits_cs_n = dimm_params[i/2].n_row_addr - 12;
- col_bits_cs_n = dimm_params[i/2].n_col_addr - 8;
+ row_bits_cs_n = dimm_params[dimm_number].n_row_addr - 12;
+ col_bits_cs_n = dimm_params[dimm_number].n_col_addr - 8;
}
-
ddr->cs[i].config = (0
| ((cs_n_en & 0x1) << 31)
| ((intlv_en & 0x3) << 29)
unsigned char act_pd_exit_mclk;
/* Precharge powerdown exit timing (tXP). */
unsigned char pre_pd_exit_mclk;
- /* Precharge powerdown exit timing (tAXPD). */
+ /* ODT powerdown exit timing (tAXPD). */
unsigned char taxpd_mclk;
/* Mode register set cycle time (tMRD). */
unsigned char tmrd_mclk;
* we use the tXP instead of it.
* tXP=max(3nCK, 7.5ns) for DDR3.
* spec has not the tAXPD, we use
- * tAXPD=8, need design to confirm.
+ * tAXPD=1, need design to confirm.
*/
int tXP = max((get_memory_clk_period_ps() * 3), 7500); /* unit=ps */
act_pd_exit_mclk = picos_to_mclk(tXP);
/* Mode register MR0[A12] is '1' - fast exit */
pre_pd_exit_mclk = act_pd_exit_mclk;
- taxpd_mclk = 8;
+ taxpd_mclk = 1;
tmrd_mclk = 4;
+ /* set the turnaround time */
+ trwt_mclk = 1;
#else /* CONFIG_FSL_DDR2 */
/*
* (tXARD and tXARDS). Empirical?
debug("FSLDDR: timing_cfg_2 = 0x%08x\n", ddr->timing_cfg_2);
}
+/* DDR SDRAM Register Control Word */
+static void set_ddr_sdram_rcw(fsl_ddr_cfg_regs_t *ddr,
+ const common_timing_params_t *common_dimm)
+{
+ if (common_dimm->all_DIMMs_registered
+ && !common_dimm->all_DIMMs_unbuffered) {
+ ddr->ddr_sdram_rcw_1 =
+ common_dimm->rcw[0] << 28 | \
+ common_dimm->rcw[1] << 24 | \
+ common_dimm->rcw[2] << 20 | \
+ common_dimm->rcw[3] << 16 | \
+ common_dimm->rcw[4] << 12 | \
+ common_dimm->rcw[5] << 8 | \
+ common_dimm->rcw[6] << 4 | \
+ common_dimm->rcw[7];
+ ddr->ddr_sdram_rcw_2 =
+ common_dimm->rcw[8] << 28 | \
+ common_dimm->rcw[9] << 24 | \
+ common_dimm->rcw[10] << 20 | \
+ common_dimm->rcw[11] << 16 | \
+ common_dimm->rcw[12] << 12 | \
+ common_dimm->rcw[13] << 8 | \
+ common_dimm->rcw[14] << 4 | \
+ common_dimm->rcw[15];
+ debug("FSLDDR: ddr_sdram_rcw_1 = 0x%08x\n", ddr->ddr_sdram_rcw_1);
+ debug("FSLDDR: ddr_sdram_rcw_2 = 0x%08x\n", ddr->ddr_sdram_rcw_2);
+ }
+}
+
/* DDR SDRAM control configuration (DDR_SDRAM_CFG) */
static void set_ddr_sdram_cfg(fsl_ddr_cfg_regs_t *ddr,
const memctl_options_t *popts,
unsigned int d_init; /* DRAM data initialization */
unsigned int rcw_en = 0; /* Register Control Word Enable */
unsigned int md_en = 0; /* Mirrored DIMM Enable */
+ unsigned int qd_en = 0; /* quad-rank DIMM Enable */
dll_rst_dis = 1; /* Make this configurable */
dqs_cfg = popts->DQS_config;
#if defined(CONFIG_FSL_DDR3)
md_en = popts->mirrored_dimm;
#endif
+ rcw_en = popts->registered_dimm_en;
+ qd_en = popts->quad_rank_present ? 1 : 0;
ddr->ddr_sdram_cfg_2 = (0
| ((frc_sr & 0x1) << 31)
| ((sr_ie & 0x1) << 30)
| ((dqs_cfg & 0x3) << 26)
| ((odt_cfg & 0x3) << 21)
| ((num_pr & 0xf) << 12)
+ | (qd_en << 9)
| ((obc_cfg & 0x1) << 6)
| ((ap_en & 0x1) << 5)
| ((d_init & 0x1) << 4)
clk_adjust = popts->clk_adjust;
ddr->ddr_sdram_clk_cntl = (clk_adjust & 0xF) << 23;
+ debug("FSLDDR: clk_cntl = 0x%08x\n", ddr->ddr_sdram_clk_cntl);
}
/* DDR Initialization Address (DDR_INIT_ADDR) */
unsigned int wodt_off = 0; /* Write to ODT off */
#if defined(CONFIG_FSL_DDR3)
- rodt_on = 3; /* 2 clocks */
+ rodt_on = 2; /* 2 clocks */
rodt_off = 4; /* 4 clocks */
- wodt_on = 2; /* 1 clocks */
+ wodt_on = 1; /* 1 clocks */
wodt_off = 4; /* 4 clocks */
#endif
/*
* Write leveling repetition time
* at least tWLO + 6 clocks clocks
- * we set it 32
+ * we set it 64
*/
- wrlvl_wlr = 0x5;
+ wrlvl_wlr = 0x6;
/*
* Write leveling start time
* The value use for the DQS_ADJUST for the first sample
ddr->ddr_sr_cntr = (sr_it & 0xF) << 16;
}
-/* DDR SDRAM Register Control Word 1 (DDR_SDRAM_RCW_1) */
-static void set_ddr_sdram_rcw_1(fsl_ddr_cfg_regs_t *ddr)
-{
- unsigned int rcw0 = 0; /* RCW0: Register Control Word 0 */
- unsigned int rcw1 = 0; /* RCW1: Register Control Word 1 */
- unsigned int rcw2 = 0; /* RCW2: Register Control Word 2 */
- unsigned int rcw3 = 0; /* RCW3: Register Control Word 3 */
- unsigned int rcw4 = 0; /* RCW4: Register Control Word 4 */
- unsigned int rcw5 = 0; /* RCW5: Register Control Word 5 */
- unsigned int rcw6 = 0; /* RCW6: Register Control Word 6 */
- unsigned int rcw7 = 0; /* RCW7: Register Control Word 7 */
-
- ddr->ddr_sdram_rcw_1 = (0
- | ((rcw0 & 0xF) << 28)
- | ((rcw1 & 0xF) << 24)
- | ((rcw2 & 0xF) << 20)
- | ((rcw3 & 0xF) << 16)
- | ((rcw4 & 0xF) << 12)
- | ((rcw5 & 0xF) << 8)
- | ((rcw6 & 0xF) << 4)
- | ((rcw7 & 0xF) << 0)
- );
-}
-
-/* DDR SDRAM Register Control Word 2 (DDR_SDRAM_RCW_2) */
-static void set_ddr_sdram_rcw_2(fsl_ddr_cfg_regs_t *ddr)
+static void set_ddr_eor(fsl_ddr_cfg_regs_t *ddr, const memctl_options_t *popts)
{
- unsigned int rcw8 = 0; /* RCW0: Register Control Word 8 */
- unsigned int rcw9 = 0; /* RCW1: Register Control Word 9 */
- unsigned int rcw10 = 0; /* RCW2: Register Control Word 10 */
- unsigned int rcw11 = 0; /* RCW3: Register Control Word 11 */
- unsigned int rcw12 = 0; /* RCW4: Register Control Word 12 */
- unsigned int rcw13 = 0; /* RCW5: Register Control Word 13 */
- unsigned int rcw14 = 0; /* RCW6: Register Control Word 14 */
- unsigned int rcw15 = 0; /* RCW7: Register Control Word 15 */
-
- ddr->ddr_sdram_rcw_2 = (0
- | ((rcw8 & 0xF) << 28)
- | ((rcw9 & 0xF) << 24)
- | ((rcw10 & 0xF) << 20)
- | ((rcw11 & 0xF) << 16)
- | ((rcw12 & 0xF) << 12)
- | ((rcw13 & 0xF) << 8)
- | ((rcw14 & 0xF) << 4)
- | ((rcw15 & 0xF) << 0)
- );
+ if (popts->addr_hash) {
+ ddr->ddr_eor = 0x40000000; /* address hash enable */
+ puts("Addess hashing enabled.\n");
+ }
}
unsigned int
/* Chip Select Memory Bounds (CSn_BNDS) */
for (i = 0; i < CONFIG_CHIP_SELECTS_PER_CTRL; i++) {
unsigned long long ea = 0, sa = 0;
-
- if (popts->ba_intlv_ctl && (i > 0) &&
- ((popts->ba_intlv_ctl & 0x60) != FSL_DDR_CS2_CS3 )) {
- /* Don't set up boundaries for other CS
- * other than CS0, if bank interleaving
- * is enabled and not CS2+CS3 interleaved.
+ unsigned int cs_per_dimm
+ = CONFIG_CHIP_SELECTS_PER_CTRL / CONFIG_DIMM_SLOTS_PER_CTLR;
+ unsigned int dimm_number
+ = i / cs_per_dimm;
+ unsigned long long rank_density
+ = dimm_params[dimm_number].rank_density;
+
+ if (((i == 1) && (popts->ba_intlv_ctl & FSL_DDR_CS0_CS1)) ||
+ ((i == 2) && (popts->ba_intlv_ctl & 0x04)) ||
+ ((i == 3) && (popts->ba_intlv_ctl & FSL_DDR_CS2_CS3))) {
+ /*
+ * Don't set up boundaries for unused CS
+ * cs1 for cs0_cs1, cs0_cs1_and_cs2_cs3, cs0_cs1_cs2_cs3
+ * cs2 for cs0_cs1_cs2_cs3
+ * cs3 for cs2_cs3, cs0_cs1_and_cs2_cs3, cs0_cs1_cs2_cs3
* But we need to set the ODT_RD_CFG and
* ODT_WR_CFG for CS1_CONFIG here.
*/
- set_csn_config(i, ddr, popts, dimm_params);
- break;
+ set_csn_config(dimm_number, i, ddr, popts, dimm_params);
+ continue;
}
-
- if (dimm_params[i/2].n_ranks == 0) {
+ if (dimm_params[dimm_number].n_ranks == 0) {
debug("Skipping setup of CS%u "
- "because n_ranks on DIMM %u is 0\n", i, i/2);
+ "because n_ranks on DIMM %u is 0\n", i, dimm_number);
continue;
}
if (popts->memctl_interleaving && popts->ba_intlv_ctl) {
/*
* This works superbank 2CS
- * There are 2 memory controllers configured
+ * There are 2 or more memory controllers configured
* identically, memory is interleaved between them,
* and each controller uses rank interleaving within
* itself. Therefore the starting and ending address
* on each controller is twice the amount present on
* each controller.
*/
- unsigned long long rank_density
- = dimm_params[0].capacity;
- ea = (2 * (rank_density >> dbw_cap_adj)) - 1;
+ unsigned long long ctlr_density = 0;
+ switch (popts->ba_intlv_ctl & FSL_DDR_CS0_CS1_CS2_CS3) {
+ case FSL_DDR_CS0_CS1:
+ case FSL_DDR_CS0_CS1_AND_CS2_CS3:
+ ctlr_density = dimm_params[0].rank_density * 2;
+ break;
+ case FSL_DDR_CS2_CS3:
+ ctlr_density = dimm_params[0].rank_density;
+ break;
+ case FSL_DDR_CS0_CS1_CS2_CS3:
+ /*
+ * The four CS interleaving should have been verified by
+ * populate_memctl_options()
+ */
+ ctlr_density = dimm_params[0].rank_density * 4;
+ break;
+ default:
+ break;
+ }
+ ea = (CONFIG_NUM_DDR_CONTROLLERS *
+ (ctlr_density >> dbw_cap_adj)) - 1;
}
else if (!popts->memctl_interleaving && popts->ba_intlv_ctl) {
/*
* controller needs to be programmed into its
* respective CS0_BNDS.
*/
- unsigned long long rank_density
- = dimm_params[i/2].rank_density;
switch (popts->ba_intlv_ctl & FSL_DDR_CS0_CS1_CS2_CS3) {
case FSL_DDR_CS0_CS1_CS2_CS3:
/* CS0+CS1+CS2+CS3 interleaving, only CS0_CNDS
/* CS0+CS1 and CS2+CS3 interleaving, CS0_CNDS
* and CS2_CNDS need to be set.
*/
- if (!(i&1)) {
- sa = dimm_params[i/2].base_address;
- ea = sa + (i * (rank_density >>
+ if ((i == 2) && (dimm_number == 0)) {
+ sa = dimm_params[dimm_number].base_address +
+ 2 * (rank_density >> dbw_cap_adj);
+ ea = sa + 2 * (rank_density >> dbw_cap_adj) - 1;
+ } else {
+ sa = dimm_params[dimm_number].base_address;
+ ea = sa + (2 * (rank_density >>
dbw_cap_adj)) - 1;
}
break;
/* CS0+CS1 interleaving, CS0_CNDS needs
* to be set
*/
- sa = common_dimm->base_address;
- ea = sa + (2 * (rank_density >> dbw_cap_adj))-1;
+ if (dimm_params[dimm_number].n_ranks > (i % cs_per_dimm)) {
+ sa = dimm_params[dimm_number].base_address;
+ ea = sa + (rank_density >> dbw_cap_adj) - 1;
+ sa += (i % cs_per_dimm) * (rank_density >> dbw_cap_adj);
+ ea += (i % cs_per_dimm) * (rank_density >> dbw_cap_adj);
+ } else {
+ sa = 0;
+ ea = 0;
+ }
+ if (i == 0)
+ ea += (rank_density >> dbw_cap_adj);
break;
case FSL_DDR_CS2_CS3:
/* CS2+CS3 interleaving*/
- if (i == 2) {
- sa = dimm_params[i/2].base_address;
- ea = sa + (2 * (rank_density >>
- dbw_cap_adj)) - 1;
+ if (dimm_params[dimm_number].n_ranks > (i % cs_per_dimm)) {
+ sa = dimm_params[dimm_number].base_address;
+ ea = sa + (rank_density >> dbw_cap_adj) - 1;
+ sa += (i % cs_per_dimm) * (rank_density >> dbw_cap_adj);
+ ea += (i % cs_per_dimm) * (rank_density >> dbw_cap_adj);
+ } else {
+ sa = 0;
+ ea = 0;
}
+ if (i == 2)
+ ea += (rank_density >> dbw_cap_adj);
break;
default: /* No bank(chip-select) interleaving */
break;
* memory in the two CS0 ranks.
*/
if (i == 0) {
- unsigned long long rank_density
- = dimm_params[0].rank_density;
ea = (2 * (rank_density >> dbw_cap_adj)) - 1;
}
* No rank interleaving and no memory controller
* interleaving.
*/
- unsigned long long rank_density
- = dimm_params[i/2].rank_density;
- sa = dimm_params[i/2].base_address;
+ sa = dimm_params[dimm_number].base_address;
ea = sa + (rank_density >> dbw_cap_adj) - 1;
- if (i&1) {
- if ((dimm_params[i/2].n_ranks == 1)) {
- /* Odd chip select, single-rank dimm */
- sa = 0;
- ea = 0;
- } else {
- /* Odd chip select, dual-rank DIMM */
- sa += rank_density >> dbw_cap_adj;
- ea += rank_density >> dbw_cap_adj;
- }
+ if (dimm_params[dimm_number].n_ranks > (i % cs_per_dimm)) {
+ sa += (i % cs_per_dimm) * (rank_density >> dbw_cap_adj);
+ ea += (i % cs_per_dimm) * (rank_density >> dbw_cap_adj);
+ } else {
+ sa = 0;
+ ea = 0;
}
}
);
debug("FSLDDR: cs[%d]_bnds = 0x%08x\n", i, ddr->cs[i].bnds);
- set_csn_config(i, ddr, popts, dimm_params);
+ set_csn_config(dimm_number, i, ddr, popts, dimm_params);
set_csn_config_2(i, ddr);
}
+ set_ddr_eor(ddr, popts);
+
#if !defined(CONFIG_FSL_DDR1)
set_timing_cfg_0(ddr);
#endif
set_ddr_sr_cntr(ddr, sr_it);
- set_ddr_sdram_rcw_1(ddr);
- set_ddr_sdram_rcw_2(ddr);
+ set_ddr_sdram_rcw(ddr, common_dimm);
return check_fsl_memctl_config_regs(ddr);
}
projects / oweals / u-boot.git / blobdiff