3 This driver supplies support for the embedded RAM controller on MCP83xx-series
6 For static configuration mode, each controller node should have child nodes
7 describing the actual RAM modules installed.
13 - compatible: Must be "fsl,mpc83xx-mem-controller"
14 - reg: The address of the RAM controller's register space
15 - #address-cells: Must be 2
16 - #size-cells: Must be 1
17 - driver_software_override: DDR driver software override is enabled (1) or
19 - p_impedance_override: DDR driver software p-impedance override; possible
21 * DSO_P_IMPEDANCE_HIGHEST_Z
22 * DSO_P_IMPEDANCE_MUCH_HIGHER_Z
23 * DSO_P_IMPEDANCE_HIGHER_Z
24 * DSO_P_IMPEDANCE_NOMINAL
25 * DSO_P_IMPEDANCE_LOWER_Z
26 - n_impedance_override: DDR driver software n-impedance override; possible
28 * DSO_N_IMPEDANCE_HIGHEST_Z
29 * DSO_N_IMPEDANCE_MUCH_HIGHER_Z
30 * DSO_N_IMPEDANCE_HIGHER_Z
31 * DSO_N_IMPEDANCE_NOMINAL
32 * DSO_N_IMPEDANCE_LOWER_Z
33 - odt_termination_value: ODT termination value for I/Os; possible values:
34 * ODT_TERMINATION_75_OHM
35 * ODT_TERMINATION_150_OHM
36 - ddr_type: Selects voltage level for DDR pads; possible
38 * DDR_TYPE_DDR2_1_8_VOLT
39 * DDR_TYPE_DDR1_2_5_VOLT
40 - mvref_sel: Determine where MVREF_SEL signal is generated;
43 * MVREF_SEL_INTERNAL_GVDD
44 - m_odr: Disable memory transaction reordering; possible
48 - clock_adjust: Clock adjust; possible values:
53 - ext_refresh_rec: Extended refresh recovery time; possible values:
54 0, 16, 32, 48, 64, 80, 96, 112
55 - read_to_write: Read-to-write turnaround; possible values:
57 - write_to_read: Write-to-read turnaround; possible values:
59 - read_to_read: Read-to-read turnaround; possible values:
61 - write_to_write: Write-to-write turnaround; possible values:
63 - active_powerdown_exit: Active powerdown exit timing; possible values:
65 - precharge_powerdown_exit: Precharge powerdown exit timing; possible values:
67 - odt_powerdown_exit: ODT powerdown exit timing; possible values:
68 0, 1, 2, 3, 4, 5, 6, 7, 8,
69 9, 10, 11, 12, 13, 14, 15
70 - mode_reg_set_cycle: Mode register set cycle time; possible values:
71 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15
72 - precharge_to_activate: Precharge-to-acitvate interval; possible values:
74 - activate_to_precharge: Activate to precharge interval; possible values:
75 4, 5, 6, 7, 8, 9, 10, 11, 12,
76 13, 14, 15, 16, 17, 18, 19
77 - activate_to_readwrite: Activate to read/write interval for SDRAM;
80 - mcas_latency: MCAS latency from READ command; possible values:
94 - refresh_recovery: Refresh recovery time; possible values:
95 8, 9, 10, 11, 12, 13, 14, 15,
96 16, 17, 18, 19, 20, 21, 22, 23
97 - last_data_to_precharge: Last data to precharge minimum interval; possible
100 - activate_to_activate: Activate-to-activate interval; possible values:
102 - last_write_data_to_read: Last write data pair to read command issue
103 interval; possible values:
105 - additive_latency: Additive latency; possible values:
107 - mcas_to_preamble_override: MCAS-to-preamble-override; possible values:
128 - write_latency: Write latency; possible values:
130 - read_to_precharge: Read to precharge; possible values:
132 - write_cmd_to_write_data: Write command to write data strobe timing
133 adjustment; possible values:
141 - minimum_cke_pulse_width: Minimum CKE pulse width; possible values:
143 - four_activates_window: Window for four activates; possible values:
144 1, 2, 3, 4 8, 9, 10, 11, 12,
145 13, 14, 15, 16, 17, 18, 19
146 - self_refresh: Self refresh (during sleep); possible values:
149 - ecc: Support for ECC; possible values:
152 - registered_dram: Support for registered DRAM; possible values:
155 - sdram_type: Type of SDRAM device to be used; possible values:
158 - dynamic_power_management: Dynamic power management mode; possible values:
161 - databus_width: DRAM data bus width; possible values
164 - nc_auto_precharge: Non-concurrent auto-precharge; possible values:
167 - timing_2t: 2T timing; possible values:
170 - bank_interleaving_ctrl: Bank (chip select) interleaving control; possible
174 - precharge_bit_8: Precharge bin 8; possible values
177 - half_strength: Global half-strength override; possible values:
180 - bypass_initialization: Bypass initialization; possible values:
181 * INITIALIZATION_DONT_BYPASS
182 * INITIALIZATION_BYPASS
183 - force_self_refresh: Force self refresh; possible values:
186 - dll_reset: DLL reset; possible values:
189 - dqs_config: DQS configuration; possible values:
191 - odt_config: ODT configuration; possible values:
196 - posted_refreshes: Number of posted refreshes
197 1, 2, 3, 4, 5, 6, 7, 8
198 - sdmode: Initial value loaded into the DDR SDRAM mode
200 - esdmode: Initial value loaded into the DDR SDRAM extended
202 - esdmode2: Initial value loaded into the DDR SDRAM extended
204 - esdmode3: Initial value loaded into the DDR SDRAM extended
206 - refresh_interval: Refresh interval; possible values:
208 - precharge_interval: Precharge interval; possible values:
215 - reg: A triple <cs addr size>, which consists of:
216 * cs - the chipselect used to drive this RAM module
217 * addr - the address where this RAM module's memory is map
218 to in the global memory space
219 * size - the size of the RAM module's memory in bytes
220 - auto_precharge: Chip select auto-precharge; possible values:
221 * AUTO_PRECHARGE_ENABLE
222 * AUTO_PRECHARGE_DISABLE
223 - odt_rd_cfg: ODT for reads configuration; possible values:
225 * ODT_RD_ONLY_CURRENT
226 * ODT_RD_ONLY_OTHER_CS
227 * ODT_RD_ONLY_OTHER_DIMM
229 - odt_wr_cfg: ODT for writes configuration; possible values:
231 * ODT_WR_ONLY_CURRENT
232 * ODT_WR_ONLY_OTHER_CS
233 * ODT_WR_ONLY_OTHER_DIMM
235 - bank_bits: Number of bank bits for SDRAM on chip select; possible
238 - row_bits: Number of row bits for SDRAM on chip select; possible values:
240 - col_bits: Number of column bits for SDRAM on chip select; possible
247 #address-cells = <2>;
249 compatible = "fsl,mpc83xx-mem-controller";
250 reg = <0x2000 0x1000>;
251 device_type = "memory";
254 driver_software_override = <DSO_ENABLE>;
255 p_impedance_override = <DSO_P_IMPEDANCE_NOMINAL>;
256 n_impedance_override = <DSO_N_IMPEDANCE_NOMINAL>;
257 odt_termination_value = <ODT_TERMINATION_150_OHM>;
258 ddr_type = <DDR_TYPE_DDR2_1_8_VOLT>;
260 clock_adjust = <CLOCK_ADJUST_05>;
265 write_to_write = <0>;
266 active_powerdown_exit = <2>;
267 precharge_powerdown_exit = <6>;
268 odt_powerdown_exit = <8>;
269 mode_reg_set_cycle = <2>;
271 precharge_to_activate = <2>;
272 activate_to_precharge = <6>;
273 activate_to_readwrite = <2>;
274 mcas_latency = <CASLAT_40>;
275 refresh_recovery = <17>;
276 last_data_to_precharge = <2>;
277 activate_to_activate = <2>;
278 last_write_data_to_read = <2>;
280 additive_latency = <0>;
281 mcas_to_preamble_override = <READ_LAT_PLUS_1_2>;
283 read_to_precharge = <2>;
284 write_cmd_to_write_data = <CLOCK_DELAY_1_2>;
285 minimum_cke_pulse_width = <3>;
286 four_activates_window = <5>;
288 self_refresh = <SREN_ENABLE>;
289 sdram_type = <TYPE_DDR2>;
290 databus_width = <DATA_BUS_WIDTH_32>;
292 force_self_refresh = <MODE_NORMAL>;
293 dll_reset = <DLL_RESET_ENABLE>;
294 dqs_config = <DQS_TRUE>;
295 odt_config = <ODT_ASSERT_READS>;
296 posted_refreshes = <1>;
298 refresh_interval = <2084>;
299 precharge_interval = <256>;
305 reg = <0x0 0x0 0x8000000>;
306 compatible = "nanya,nt5tu64m16hg";
308 odt_rd_cfg = <ODT_RD_NEVER>;
309 odt_wr_cfg = <ODT_WR_ONLY_CURRENT>;